Orbital Hall effect in bilayer transition metal dichalcogenides: From the intra-atomic approximation to the Bloch states orbital magnetic moment approach
نویسندگان
چکیده
Using an effective Dirac model, we study the orbital Hall effect (OHE) in bilayers of transition metal dichalcogenides with 2H stacking (2H-TMD). We use first-order perturbation theory interlayer coupling bilayer system to obtain analytical expressions for conductivity linear response regime. two distinct descriptions angular momentum (OAM) operator: The first one is intra-atomic approximation that considers only intrasite contribution OAM [Cysne et al. Phys. Rev. Lett. 126, 056601 (2021)]. second uses Berry-phase formula (valley) magnetic moment describe operator [Bhowal and Vignale, B 103, 195309 This approach includes both intersite contributions OAM. Our results suggest approaches agree qualitatively describing OHE 2H-TMDs, although they present some quantitative differences. also show plays essential role understanding unbiased 2H-TMD. causes Bloch states become bonding (antibonding) combinations individual layers, demanding consideration non-Abelian structure occurrence OHE. As discuss throughout work, emerging picture transport 2H-TMDs based on very different from usual valley effect, shedding new lights previous experimental results. inclusion a gate-voltage bias system. work gives support recent theoretical predictions two-dimensional materials.
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ژورنال
عنوان ژورنال: Physical Review B
سال: 2022
ISSN: ['1098-0121', '1550-235X', '1538-4489']
DOI: https://doi.org/10.1103/physrevb.105.195421